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 FJP13007
FJP13007
High Voltage Switch Mode Application
* High Speed Switching * Suitable for Switching Regulator and Motor Control
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V A A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCEO IEBO hFE1 hFE2 VCE(sat) Parameter Collector- Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50 4 1.6 3 0.7 110 8 5 Min. 400 Typ. Max. 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz s s s Units V mA
VBE (sat) Cob fT tON tSTG tF
*Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time
* Pulse test: PW300s, Duty cycle2%
hFE Classification
Classification hFE1 R(H1) 15 ~ 28 O(H2) 26 ~ 39
(c)2004 Fairchild Semiconductor Corporation
Rev. B, July 2004
FJP13007
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
10
VCE = 5V
IC = 3 IB
hFE, DC CURRENT GAIN
1
VBE(sat)
10
0.1
VCE(sat)
1 0.1
1
10
0.01 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Saturation Voltage
1000
1000
Cob[pF], OUTPUT CAPACITANCE
tR, tD [ns], TURN ON TIME
100
tR
100
10
tD, VBE(off)=5V
VCC=125V IC=5IB
1 0.1 1 10 100 1000
10 0.1 1 10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10000
100
tSTG, tF [ns], TURN OFF TIME
VCC=125V IC=5IB
IC[A], COLLECTOR CURRENT
tSTG
1000
10s
10
DC
1ms
100s
1
100
tF
0.1
10 0.1
1
10
0.01 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Forward Biased Safe Operating Area
(c)2004 Fairchild Semiconductor Corporation
Rev. B, July 2004
FJP13007
Typical Characteristics (Continued)
100
100
IC[A], COLLECTOR CURRENT
10
PC[W], POWER DISSIPATION
Vcc=50V, IB1=1A, IB2 = -1A L = 1mH
90 80 70 60 50 40 30 20 10
1
0.1
0.01 10
0 100 1000 10000 0 25 50
o
75
100
125
150
175
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 7. Reverse Biased Safe Ooperating Area
Figure 8. Power Derating
(c)2004 Fairchild Semiconductor Corporation
Rev. B, July 2004
FJP13007
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B, July 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM
ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM
SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I11


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